STRESSED SEMICONDUCTOR-ON-INSULATOR STRUCTURE RESISTANT TO HIGH-TEMPERATURE STRESS

摘要

The invention relates to a semiconductor- on-insulator structure, comprising a part which is made of a semiconductor material and a part which is made of an electrically insulating material, said materials being coupled to each other. Elastic stress is present in the semiconductor material. The part made of electrically insulating material has a viscosity temperatureTG which is higher than the viscosity temperature TG SiO2 of SiO 2. The invention also relates to a method for the production of said semiconductor-on-insulator structure.