Production of semiconductor elements for Bragg reflector involves growing epitaxial aluminum indium nitride layers, and changing aluminum-to-indium ratio during growth process

摘要

Production of semiconductor elements comprises growing epitaxial AlInN layers in connection with GaN, AlN or AlGaN layers and reducing the Al:In ratio and/or raising substrate temperature during growth of the first 1-200 nm of the layer or pre-streaming indium before the Al process to grow the AlInN layer. An independent claim is also included for a semiconductor element formed as above.