BENUTZUNG EINER ZUSAMMENSETZUNG FÜR EINE ANTIREFLEXUNTERSCHICHT

摘要

A composition for bottom reflection prevention film comprises at least a solvent and a polymeric dye of formula (I). A composition for bottom reflection prevention film comprises at least a solvent and a polymeric dye of formula (I): [Image] R : H, (un)substituted 1-20C alkyl, (un)substituted 6-20C cycloalkyl, or (un)substituted 6-20C aryl R1>H, (un)substituted 1-5C alkyl, (un)substituted 6-10C aryl, -COOR3> R3>1-10C alkyl R2> (un)substituted 1-6C alkyl, (un)substituted 6-20C cycloalkyl, or (un)substituted 1-6C alkyl(un), or (un)substituted 6-20C aryl D = organic chromophore with absorption at exposure wavelength of 150-450 nm(un)substituted 6-30C aryl, (un)substituted fused 6-30C aryl, or (un)substituted 4-30C heterocyclyl, when m, o = not less than 0, n, p, q >= 0. Independent claims are also included for: (i) a process of forming a bottom reflection prevention film on a semiconductor substrate comprising: (a) dissolution of the polymeric dye in an organic solvent; (b) filtering the solution and applying the filtrate onto the substrate by spin-coating, spray-coating, impregnation, or rolling; and (c) removing the solvent by heating; (ii) a method for making an integrated circuit by applying the composition onto a semiconductor substrate, covering the coated substrate with a positive or negative photoresist responsive to irradiation at wavelength in the region of 150-450 nm for light exposure, image development, wet or dry etching to give images transferred to the substrate; (iii) a polymeric dye of formula (I); and (iv) a process for producing the polymeric dye.