发明名称 |
Device for measuring memory cell current esp. from non-volatile stores, includes current mirror device for mirroring current during readout of memory cell |
摘要 |
<p>A device (102) for measuring memory cells current, has a current mirror device (110) for mirroring a current flowing through this during read-out of the memory cell, and supplies an analog current signal generated during mirroring or an analog current signal obtained here on an analog output pad of a memory component. An independent claim is included for a method for measuring a memory cell current.</p> |
申请公布号 |
DE102004055466(A1) |
申请公布日期 |
2006.05.24 |
申请号 |
DE20041055466 |
申请日期 |
2004.11.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PAPARISTO, EDVIN;ROGL, STEPHAN |
分类号 |
G11C29/50 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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