发明名称 Device for measuring memory cell current esp. from non-volatile stores, includes current mirror device for mirroring current during readout of memory cell
摘要 <p>A device (102) for measuring memory cells current, has a current mirror device (110) for mirroring a current flowing through this during read-out of the memory cell, and supplies an analog current signal generated during mirroring or an analog current signal obtained here on an analog output pad of a memory component. An independent claim is included for a method for measuring a memory cell current.</p>
申请公布号 DE102004055466(A1) 申请公布日期 2006.05.24
申请号 DE20041055466 申请日期 2004.11.17
申请人 INFINEON TECHNOLOGIES AG 发明人 PAPARISTO, EDVIN;ROGL, STEPHAN
分类号 G11C29/50 主分类号 G11C29/50
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