| 摘要 |
A field effect transistor includes an i-type first semiconductor layer and a second semiconductor layer that is formed on the first semiconductor layer and the band gap energy of that is higher in magnitude than that of the first semiconductor layer. The first semiconductor layer and second semiconductor layer are each made of a gallium nitride-based compound semiconductor layer. A gate electrode (36) is formed on the second semiconductor layer; and a second electrode (39) is formed on the first semiconductor layer. Thus, the field effect transistor is constructed in such a manner as the first semiconductor layer and second semiconductor layer are interposed between the gate electrode (36) and the second electrode (39). By constructing like this, it is possible to discharge the holes that are accumulated in the channel from the elemental structure and to improve the withstand voltage of the field effect transistor. |
