Sense amplifier, has two field effect transistors possessing bulk or substrate connections that are formed in respective wells of substrate, where wells are electrically isolated from each other

摘要

The amplifier has two field-effect transistors (114, 116) that are coupled opposite to each other between a bit line and a reference line. The bit line is connected with memory nodes by a selection transistor. The transistors (114, 116) possess bulk or substrate connections that are formed in respective wells (22a, 22b) of a substrate, where the well (22b) is electrically isolated from the well (22a). An independent claim is also included for a method for adjusting well potentials in a sense amplifier.