发明名称 |
Low power pre-silicide process in integrated circuit technology |
摘要 |
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A thin insulating layer is formed over the source/drain junctions. A silicide is formed on the thin insulating layer and on the gate. An interlayer dielectric is deposited above the semiconductor substrate. Contacts are then formed in the interlayer dielectric to the silicide.
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申请公布号 |
US7049666(B1) |
申请公布日期 |
2006.05.23 |
申请号 |
US20040859286 |
申请日期 |
2004.06.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHIU ROBERT J.;PATTON JEFFREY P.;BESSER PAUL R.;NGO MINH VAN |
分类号 |
H01L29/94;H01L21/44 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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