SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device comprises an interconnect (3a) made of first (6) and second (8) conductive films that are stacked in sequence from the interconnect underside on an insulative film (4) formed on a substrate (1); and a capacitors (10a) composed lower and upper electrodes made of first and second conductive films and a dielectric film (7). The device also includes an extension interconnect connected to the interconnect made of the first and second conductive films, and a resistor. An independent claim is included for fabricating a semiconductor device.