发明名称 |
POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION |
摘要 |
<p>A means for increasing development velocity of a positive photoresist composition is provided which contains a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2- naphthoquinonediazide sulfonyl group. This means is positive photoresist composition and a formation method of a resist pattern using the composition which contains (A) a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group, which is dissolved in (B) propylene glycol alkyl ether acetate.</p> |
申请公布号 |
KR20060055546(A) |
申请公布日期 |
2006.05.23 |
申请号 |
KR20067004821 |
申请日期 |
2006.03.09 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
MASUDA YASUO;OKUI TOSHIKI |
分类号 |
G03F7/023;G03F7/004;H01L21/027 |
主分类号 |
G03F7/023 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|