Semiconductor integrated circuit having transistor with reduced resistance

摘要

An increase in the overall resistance value of a transistor is prevented by having different contact resistances for connections between conductors in different wiring layers. The transistor has a first conductive layer having a first resistivity formed over impurity diffusion regions, a first contact group connecting the first conductive layer and the impurity diffusion regions through holes, a second conductive layer having a second resistivity formed over the first conductive layer, and a second contact group connecting the first conductive layer and the second conductive layer through holes. The first contact group and the second contact group have a different total number of contacts.