发明名称 |
Method for manufacturing vias between conductive patterns utilizing etching mask patterns formed on the conductive patterns |
摘要 |
In a manufacture of a semiconductor device, spacers are formed on sidewalls of structures including conductive patterns and insulation patterns. The insulation patterns are at least four times thinner than the conductive patterns. After gaps between the structures are filled with a first insulation film, etch stop film patterns having a width which is wider than that of the structures are formed on the structures. A second insulation film is formed to cover the resultant structures without voids between the structures.
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申请公布号 |
US7049225(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20040782783 |
申请日期 |
2004.02.23 |
申请人 |
SUMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JU-BUM |
分类号 |
H01L21/31;H01L21/4763;H01L21/60;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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