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发明名称
Phase change resistor cell, non-volatile memory device and contol method using the same
摘要
申请公布号
KR100583115(B1)
申请公布日期
2006.05.23
申请号
KR20030090962
申请日期
2003.12.13
申请人
发明人
分类号
H01L27/115;G11C11/00;G11C16/02;H01L27/24
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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