FET type sensor, ion density detecting method comprising this sensor, and base sequence detecting method

摘要

The surface of a semiconductor substrate ( 1 ) comprises an input diode section ( 2 ) and a floating diffusion section ( 3 ) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate ( 6 ) and an output gate ( 7 ) fixed on an insulation film ( 5 ) extending from an input diode section to a floating diffusion section, a sensing section ( 9 ) consisting of an ion sensitive film fixed on the insulation film extending from the input.