发明名称 |
Charge-trapping memory device including high permittivity strips |
摘要 |
The charge-trapping layer comprises two strips above the source and drain junctions. The thicknesses of the charge-trapping layer and the gate dielectric are chosen to facilitate Fowler-Nordheim-tunnelling of electrons into the strips during an erasure process. Programming is performed by injection of hot holes into the strips individually for two-bit storage.
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申请公布号 |
US7049651(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20030715142 |
申请日期 |
2003.11.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MIKOLAJICK THOMAS;REISINGER HANS;WILLER JOSEF;LIAW CORVIN |
分类号 |
H01L29/788;G11C16/04;H01L21/28;H01L21/8246;H01L27/115;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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