发明名称 METHOD OF PRODUCING PHASE SHIFT MASKS
摘要 In a first step, an etching mask layer (3a) and a light-shielding film (2) are etched to form an etching mask layer (3a) consisting of a main opening (5) and auxiliary openings (6), and a light-shielding film pattern (2a). Then, in a second step, impression etching of a transparent substrate (formation of a substrate impressed section (8)) is effected, and in a final third step, the etching mask layer (3a) is removed. Thereby, since the main and auxiliary openings can be simultaneously exposed to light in the first step, the accuracy of positioning of them is improved. Further, the etching mask layer (3a), which is damaged in the second step, is removed in the third step. That is, the etching mask layer (3a) can protect the light- shielding film pattern (2a), thus preventing the light-shielding film pattern (2a) from being damaged.
申请公布号 KR20060055527(A) 申请公布日期 2006.05.23
申请号 KR20067001823 申请日期 2004.08.09
申请人 HOYA CORPORATION 发明人 SUDA HIDEKI
分类号 G03F1/29;G03F1/68;G03F7/40;H01L21/027 主分类号 G03F1/29
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