| 摘要 |
The invention relates to a method for producing a contact substrate ( 10 ) as well as to a contact substrate with through-plating between a connector arrangement ( 21 ) arranged at the top of a dielectric carrier substrate ( 12 ) and the underside of the carrier substrate, wherein the connector arrangement extends along an aperture margin ( 22 ) of a substrate recess ( 15 ), and the underside ( 11 ) of the carrier substrate ( 12 ) is supported by a backstop ( 23 ), wherein a formed solder material part ( 24 ) is placed in the substrate recess ( 15 ), and in a subsequent method-related step said formed solder material part ( 24 ) is deformed within the substrate recess so as to form a formed contact part ( 50 ), such that radial displacement of the material of the formed solder material part in the substrate recess results in a non-positive connection between an intrados surface ( 28 ) of the substrate recess and the connector arrangement ( 21 ), and that the formed contact part provides through-plating between the connector arrangement ( 21 ) and the underside ( 11 ) of the carrier substrate.
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