发明名称 High frequency power amplifier circuit device
摘要 A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.
申请公布号 US7049892(B2) 申请公布日期 2006.05.23
申请号 US20040849852 申请日期 2004.05.21
申请人 发明人
分类号 H03F3/68;H03G3/30;H03F1/02;H03F3/20;H03F3/24 主分类号 H03F3/68
代理机构 代理人
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