| 摘要 |
1,194,113. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 7 May, 1968 [18 May, 1967], No. 21553/68. Heading H1K. A method of fabricating a transistor having a complex base region of relatively active and relatively inactive parts comprises defining, by means of an aperture in an insulating layer 11 of silicon dioxide on a semi-conductor substrate 10 containing an impurity of the one type conductivity, that part where the complex base is to be, and forming on the exposed substrate surface, over that part which is to be the relatively inactive base region, a layer 15 of silicon dioxide doped with an impurity of the opposite type conductivity to leave uncovered that part 14 where the relatively active base region is to be. The coated substrate 10 is then heated to diffuse the impurity from the layer 15 into the substrate to form the relatively inactive base region 16. Then a further impurity of the opposite type conductivity is diffused through the uncovered portion 14 to form the relatively active base region 17. Finally an impurity of the one type conductivity is diffused through the same portion 14 to a lesser depth to form the emitter 18. |
