发明名称 СПОСОБ ПОЛУЧЕНИЯ КВАНТОВОРАЗМЕРНЫХ СТРУКТУР НА ОСНОВЕ АМОРФНЫХ КРЕМНИЕВЫХ НАНОКЛАСТЕРОВ, ВСТРОЕННЫХВ ДИЭЛЕКТРИЧЕСКУЮ МАТРИЦУ
摘要 FIELD: technology for production of quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix, by means of decomposition of silicon containing gas mixture, possible use in solid body electronics. ^ SUBSTANCE: method for producing quantum size structures on basis of amorphous silicon nano-clusters, built into dielectric matrix, is realized by decomposing a mixture of mono-silane and source of nitrogen in plasma of glow discharge with generation of reaction products and sedimentation from them of quantum size structures based on amorphous silicon nano-clusters. During decomposition and sedimentation, plasma of glow discharge is used with frequency of 45-65 kHz, and as nitrogen source ammonia is used. ^ EFFECT: increased speed of growth of quantum sized structures on basis of silicon nano-clusters, built into dielectric matrix, while preserving their tool qualities. ^ 1 tbl
申请公布号 RU2004136386(A) 申请公布日期 2006.05.20
申请号 RU20040136386 申请日期 2004.12.14
申请人 Институт микроэлектроники и информатики РАН (RU) 发明人 Бердников Аркадий Евгеньевич (RU);Попов Александр Афанасьевич (RU);Черномордик Владимир Дмитриевич (RU)
分类号 H01L21/205 主分类号 H01L21/205
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