| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of largely improving throughput. Ž<P>SOLUTION: The substrate treatment method for wafer treatment includes substrate carrying steps (steps S43, S49) executed in a substrate treatment system 1 provided with a substrate treatment apparatus, an atmospheric carrier, and a load lock chamber and carrying a semiconductor wafer; and substrate treatment steps (steps S44, S48) for applying etching treatment to the semiconductor wafer W. The substrate carrying steps and the substrate processing steps comprise a plurality of operations, and the substrate treatment method executes at least two operations among a plurality of the operations constituting each of the steps in parallel. Ž<P>COPYRIGHT: (C)2006,JPO&NCIPI Ž</p> |
