COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP

摘要

[PROBLEMS] To provide a composition for forming a lower layer film for lithography for use in a lithography process for the manufacture of a semiconductor device, and a lower layer film which exhibits an etching rate greater than that of a photoresist and does not cause the intermixing with a photoresist. [MEANS FOR SOLVING PROBLEMS] A composition for forming a lower layer film comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, or comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.