| 摘要 |
A TFT structure and a circuit configuration, which are suitable, for example, for input/output protection of a liquid crystal display device, are provided. According to an embodiment of the invention, there is provided a TFT that includes a source region, a channel region and a drain region, which are formed in a Si thin film, and a gate insulation film and a gate electrode, which are formed over the channel region. A central portion and a source-side end portion of the channel region are formed of a substantially single-crystal semiconductor, and a drain-side end portion of the channel region is formed of a polycrystalline or amorphous semiconductor. The TFT is used in a protection circuit section, thereby enabling absorption of a surge voltage in the protection circuit section. |
