发明名称 SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICE, SUBSTRATE FOR ELECTRO-OPTICAL DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS
摘要 A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at least a semiconductor layer of the thin film transistor, and a contact hole that has a first hole being cut in the interlayer insulating film and extending in a longitudinal direction in plan view on a substrate surface and a plurality of second holes passing through the interlayer insulating film from a bottom of the first hole to reach a surface of the semiconductor layer and being arranged in the longitudinal direction of the first hole. The connect hole connects the wiring line to the semiconductor layer via the interlayer insulating film.
申请公布号 KR20060050198(A) 申请公布日期 2006.05.19
申请号 KR20050064024 申请日期 2005.07.15
申请人 SEIKO EPSON CORPORATION 发明人 MORIWAKI MINORU
分类号 H01L21/28;H01L21/3205 主分类号 H01L21/28
代理机构 代理人
主权项
地址