| 摘要 |
<p>A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.</p> |
