RESISTIVE MEMORY ARRANGEMENT, IN PARTICULAR CBRAM MEMORY,申请号KR20050079793-传众专利搜索

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发明名称	RESISTIVE MEMORY ARRANGEMENT, IN PARTICULAR CBRAM MEMORY
摘要
申请公布号	KR20060050789(A)	申请公布日期	2006.05.19
申请号	KR20050079793	申请日期	2005.08.30
申请人	INFINEON TECHNOLOGIES AG	发明人	LIAW CORVIN;ROEHR THOMAS;KUND MICHAEL
分类号	G11C13/02;G11C11/15	主分类号	G11C13/02
代理机构		代理人
主权项
地址

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