| 摘要 |
A thin film transistor (60) includes a semiconductor layer formed over a substrate (P), and an electrode member formed over the substrate by a liquid phase method. The electrode member includes a base layer (67) composed of a metal material and an outer surface layer deposited on at least one surface of the base layer. The outer surface layer is formed of a metal material that is less susceptible to being dissolved in silicon and a silicon compound compared with the metal material constituting the base layer. |
