MEMORY COMPONENT(CBRAM) HAVING MEMORY CELLS BASED ON AN ACTIVE SOLID ELECTROLYTE MATERIAL WHICH CAN BE CHANGED IN TERMS OF ITS RESISTANCE VALUE, AND FABRICATION METHOD THEREFOR

摘要

A conductive bridge RAM (CBRAM) comprises memory cells on a base of active solid electrolyte (13) of alterable resistance embedded between two electrodes (BE,TE) applying given electric fields to switch between high resistance OFF and low resistance ON states. Resistive material (10) is embedded between the electrodes parallel to the electrolyte. An independent claim is also included for a production process for the above.