| 摘要 |
A method of depositing a film comprising a Group IIIA metal on a substrate comprising the steps of: a) conveying a Group IIIA metal compound having the formula R 3 M, where M is a Group IIIA metal and each R is independently a (C 1 -C 10 ) organic radical or hydrogen, in a gaseous phase to a deposition chamber containing the substrate; b) conveying a catalytic amount of a catalyst compound in a gaseous phase to the deposition chamber containing the substrate; c) conveying a Group VA gaseous compound to the deposition chamber containing the substrate; d) decomposing the Group IIIA metal compound and the Group VA gaseous compound in the deposition chamber; and e) depositing the film comprising the Group IIIA metal on the substrate, wherein the catalyst compound catalyzes the decomposition of the Group VA gaseous compound. |
