发明名称 |
NONVOLATILE MEMORY DEVICE |
摘要 |
<p>A nonvolatile memory device includes: a semiconductor layer of a first conductivity type in which a first region, a second region, and a third region are partitioned by an isolation insulating layer; a semiconductor section of a second conductivity type provided in the first region and functioning as a control gate; a semiconductor section of the first conductivity type provided in the second region; a semiconductor section of the second conductivity type provided in the third region; an insulating layer provided on the semiconductor layer in the first to third regions; a floating gate electrode provided on the insulating layer across the first to third regions; impurity regions of the first conductivity type provided on each side of the floating gate electrode in the first region; impurity regions of the second conductivity type provided on each side of the floating gate electrode in the second region and functioning as either a source region or a drain region; and impurity regions of the first conductivity type provided on each side of the floating gate electrode in the third region and functioning as either a source region or a drain region.</p> |
申请公布号 |
KR20060049592(A) |
申请公布日期 |
2006.05.19 |
申请号 |
KR20050050883 |
申请日期 |
2005.06.14 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MAEMURA KIMIHIRO;KODAIRA SATORU;KOBAYASHI HITOSHI |
分类号 |
H01L21/8247;H01L27/115;G11C16/04;H01L21/28;H01L29/423;H01L29/76;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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