| 摘要 |
A semiconductor device which comprises a wiring structure capable of reducing stress concentration at a boundary between a wiring and a low dielectric constant insulator even when the low dielectric constant insulator is used as an interlevel or interwiring insulator in a multilevel wiring, suppressing peeling-off of the insulator and having increased heat radiation efficiency is provided by comprising an insulator formed on a semiconductor substrate, a wiring formed in the insulator, and a network dummy formed in the insulator and disposed to be apart from the wiring.
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