| 摘要 |
Embodiments of the invention include a non-volatile memory device manufactured using ion-implantation, and a method of manufacturing the same. A dielectric layer may be formed on a semiconductor substrate, and an ion implantation layer, which may be used as a charge trapping site, may be formed by ion implantation with Si or Ge. Then, an annealing process may be performed. Subsequently, a process for forming a transistor on the dielectric layer may be performed.
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