| 摘要 |
There is provided a semiconductor device which includes a projecting semiconductor layer provided on a substrate and having a first side surface and a second side surface opposed to the first side surface, a first gate insulating film provided on the semiconductor layer, a first gate electrode provided on the first gate insulating film, a first and a second diffusion layers provided on respective sides of the first gate electrode and in the semiconductor layer, a first insulating film provided on the first side surface, and a first conductive layer electrically connected to the first gate electrode and provided below the first and second diffusion layers and on a side surface of the first insulating film.
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