发明名称 |
Organic thin film transistor array panel and manufacturing method thereof |
摘要 |
A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; depositing an ITO layer at a temperature of about 20-35° C.; etching the ITO layer to form a data line and a drain electrode on the gate insulating layer; and forming an organic semiconductor on the data line, the drain electrode, and the gate insulating layer.
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申请公布号 |
US2006102954(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20050236111 |
申请日期 |
2005.09.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU MIN-SEONG;SEO JONG-HYUN;HONG MUN-PYO |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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