| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element of a GaN-based compound semiconductor as a light-emitting device by packaging by flip-chip junction that can effectively utilize light generated inside the element. <P>SOLUTION: In the semiconductor light-emitting element, an n-type layer, a light-emitting layer, and a p-type layer are laminated successively on one surface of a light-transmitting support substrate, and the GaN-based compound semiconductor layer, which has a recess for forming an n-type electrode on the n-type layer, is included. The recess has an inclined surface with p-type and n-type layer sides as a wide opening and a narrow bottom surface, respectively, and a reflection layer, which reflects light radiated from the light-emitting layer to the side of the support substrate, is provided at least on the inclined surface. The reflection layer is formed on the inclined surface via an insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
