| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device and a manufacturing method thereof wherein high withstand voltage and compactness are made compatible. <P>SOLUTION: In the semiconductor device 100, a gate trench 21 and a p-floating region 51 are formed in a cell area, and a terminating trench 62 and a p-floating region 53 are formed in a terminating area. Further, the inside of the terminating trench 621 among three terminating trenches 62 (terminating trench 621, terminating trench 622, terminating trench 623) has the same structure as the gate trench 21, and the other terminating trenches have a structure filled with an insulator such as silicon oxide etc. Further, the p-floating region 51 is formed by injecting an impurity from the underside of the gate trench 21, and the p-floating region 53 is formed by injecting an impurity from the underside of the terminating trench 62. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
