发明名称 ZnO SEED LAYER BY ALD FOR DEPOSITING ZnO NANOSTRUCTURE ON SILICON SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide technique of forming a ZnO nanostructure without using a metal catalyst. SOLUTION: The technique of growing the nanostructure of zinc oxide without using the metal catalyst by forming a seed layer of polycrystalline zinc oxide on the surface of a substrate is provided. The seed layer can be formed by an atomic layer deposition (ALD) method (102). The growth of the at least one nanostructure of the polycrystalline zinc oxide is induced on the seed layer (103). The seed layer can be formed by an organic metal deposition method, spray pyrolysis method, RF sputtering method, or spin-on method, such as oxidation of the seed layer, as an alternative method. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006124834(A) 申请公布日期 2006.05.18
申请号 JP20050305059 申请日期 2005.10.19
申请人 SHARP CORP 发明人 STECKER LISA H;CONLEY JOHN F JR
分类号 C23C16/40;B82B1/00;B82B3/00;C01G9/02;H01L29/06 主分类号 C23C16/40
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