| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory device, capable of preventing problems that arise at high dielectric film etching, and to provide a flash memory device manufactured by the method. SOLUTION: The method for manufacturing a flash memory device comprises defining a plurality of parallel active regions, by forming element isolation films in a semiconductor substrate in an embodiment. A plurality of first conductive film patterns, separated from each another in the direction of the length of the active region, are formed on the active region. A conformal insulating film is formed on a semiconductor substrate having the first conductive film pattern. A second conductive film is formed on the insulating film. By patterning the second conductive film so that the insulating film is exposed, a plurality of parallel second conductive film patterns are formed that cross the active region and the element isolation film so as to be overlapped with the first conductive film patterns. COPYRIGHT: (C)2006,JPO&NCIPI
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