| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser and its manufacturing method, wherein a laser beam of high power, having a narrow radiation angle can be emitted. SOLUTION: THe surface-emitting semiconductor laser 100 contains a substrate 101, a first mirror 102 formed above the substrate 101, an active layer 103 formed above the first mirror 102, a second mirror 104 formed above the active layer 103, and a lens 190 formed above the second mirror 104. The lens 190 has a function of changing the path of a light to be emitted from the upper face 104a of the second mirror 104, and the second mirror 104 has a photonic crystal region 122, having a cyclic refractive index distribution in the surface direction of the second mirror 104. The photonic crystal region 122 has a defective region 124 and has a function of confining light in the defective region 124. COPYRIGHT: (C)2006,JPO&NCIPI
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