| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a capacitor provided with electrodes formed of polysilicon doped with impurities and capable of improving its capacity in voltage-dependent properties. SOLUTION: The semiconductor device is equipped with a semiconductor substrate 10; a capacitor A provided with a lower electrode 12a which is formed of polysilicon on the semiconductor substrate 10 via an insulating film 11 and doped with impurities, and an upper electrode 14a which is formed of polysilicon via an insulating film 13a and doped with impurities; a capacitor B provided with a lower electrode 12a which is formed of polysilicon on the semiconductor substrate 10 via the insulating film 11 and doped with impurities, and an upper electrode 14b which is formed of polysilicon via of an insulating film 13b and doped with impurities; wiring 16b electrically connecting the lower electrode of the capacitor A to the upper electrode of the capacitor B; and wiring 16a electrically connecting the upper electrode of the capacitor A to the lower electrode of the capacitor B. COPYRIGHT: (C)2006,JPO&NCIPI
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