发明名称 |
Ultrathin buried insulators in Si or Si-containing material |
摘要 |
A method for forming an ultra thin buried oxide layer is described incorporating the steps of forming a first epitaxial layer containing Si on a Si containing substrate having a thickness from about 10 to about 300 angstroms thick, forming a second epitaxial layer containing Si having a thickness from about 100 angstroms to about 1 micron and annealing the substrate at a temperature from 1200° C. to 1400°0 C. in an oxygen containing atmosphere. The invention over comes the problem of the buried oxide breaking up into oxide islands during the anneal.
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申请公布号 |
US2006105559(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20040990300 |
申请日期 |
2004.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN TZE-CHIANG;MEYERSON BERNARD S.;SADANA DEVENDRA K. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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