| 发明名称 |
FILM FORMATION APPARATUS AND METHOD OF USING THE SAME |
| 摘要 |
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film. |
| 申请公布号 |
KR20060047371(A) |
申请公布日期 |
2006.05.18 |
| 申请号 |
KR20050033359 |
申请日期 |
2005.04.22 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ENDO ATSUSHI;FUJIWARA TOMONORI;MOROZUMI YUICHIRO;HARADA KATSUSHIGE;NAKAJIMA SHIGERU;CHOI, DONG KYUN;FURUYA HARUHIKO;YABE KAZUO |
| 分类号 |
B08B5/00;H01L21/205;B08B7/00;B08B7/04;C23C16/00;C23C16/44;H01L21/304;H01L21/3065;H01L21/31;H01L21/469 |
主分类号 |
B08B5/00 |
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