| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device which can achieve a high withstand voltage by uniformly distributing an electric field between electrodes, using a simple configuration. SOLUTION: A gate Schottky electrode 106 is formed on an active layer made up of a GaN layer 102 and an AlGaN layer 103, and a source ohmic electrode 105 and a drain ohmic electrode 107 are formed on the active layer and on both sides of the gate Schottky electrode 106. A dielectic layer (TiO<SB>2</SB>layers 108, 109, and 110), having a step-like laminated structure, is formed on the AlGaN layer 103 so that the electric field is almost uniformly distributed between the gate Schottky electrode 106 and the drain ohmic electrode 107. The permittivity of TiO<SB>2</SB>of the dielectric layer is set higher than those of GaN or of AlGaN of the active layer. COPYRIGHT: (C)2006,JPO&NCIPI |
