| 摘要 |
PROBLEM TO BE SOLVED: To provide an on-die termination circuit for stabilizing mismatching between a stable valid termination resistance value and a pull-up/pull-down path resistance value regardless of the fluctuation of manufacturing conditions, a voltage, and a temperature in a semiconductor memory. SOLUTION: This semiconductor memory element is provided with a decoding means for decoding the set value of an EMRS, and for outputting a decoded output signal, an ODT output driving means including a plurality of output driving parts having different termination resistance values connected in parallel with an output node which outputs an ODT output signal and a control signal generating means for generating a plurality of control signals for turning on/off a plurality of output driving parts in response to the decoded output signal of the decoding means. COPYRIGHT: (C)2006,JPO&NCIPI
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