| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a flash memory cell and a manufacturing method thereof capable of preventing the occurrence of a malfunction in a logic circuit etc. formed in a peripheral circuit region. SOLUTION: This manufacturing method of the semiconductor device comprises steps of removing a second insulating film 26 on the contact region CR of a first electric conductor 25a, forming a second electrically conductive film 30 on the second insulating film 26, removing the second conductive film 30 on the contact region CR of the first electric conductor 25a, and forming the second conductive film 30 to a second electric conductor 30a, forming an interlayer insulating film 44 (third insulating film) covering the second conductive film 30, forming a first hole 44a in the interlayer insulating film 44 on the contact region CR, and forming an electrically conductive plug 45a electrically connected to the contact region CR within the first hole 44a. COPYRIGHT: (C)2006,JPO&NCIPI
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