THERMOELECTRIC MATERIAL AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thermoelectric material along with its manufacturing method comprising Mg2Si base thermoelectric semiconductor of excellent performance index, with improved safety in manufacturing process and reduced manufacturing cost when interested in a molten method and discharge plasma baking method under an atmospheric pressure. SOLUTION: A lump of Mg and Si is housed in the dissolve chamber 7 of a graphite vessel 1 comprising a buffer cavity 6 on the atmosphere side with Al and Zn composite-added as dopant element. With inert gas replaced in the buffer cavity 6, it is kept at a temperature range from the melting point of Mg2Si compound to the boiling point of Mg for a specified period, to generate a compound melt or alloy melt. The melt is cooled to generate an ingot. The Mg2Si material powder generated by crushing the ingot is baked by a discharge plasma baking method. COPYRIGHT: (C)2006,JPO&NCIPI