发明名称 SEMICONDUCTOR DEVICE
摘要 Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the conducting impurity regions. Thus, the leakage of high-frequency signals can be suppressed. In particular, in a case where a floating conducting region is placed between a peripheral impurity region of a common input terminal pad and a resistor in a switch circuit device, it is possible to suppress the leakage of high-frequency signals from an input terminal to control terminals which become high frequency GND and to suppress an increase in insertion loss.
申请公布号 KR20060048039(A) 申请公布日期 2006.05.18
申请号 KR20050042384 申请日期 2005.05.20
申请人 SANYO ELECTRIC CO., LTD. 发明人 ASANO TETSURO
分类号 H01L27/04;H01L27/095;H01L21/338;H01L23/34;H01L29/778;H01L29/812;H03K17/00;H03K17/693 主分类号 H01L27/04
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