| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly efficient nitride semiconductor element for improving internal quantum efficiency, and for improving an operating voltage and reverse voltage characteristics. <P>SOLUTION: This nitride semiconductor element is formed with an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active layer 25 formed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. Further, the element is formed with a quantum well layer 25a and a quantum barrier layer 25b, and an electronic emission layer is formed between the n-type nitride semiconductor layer and the active layer, where first nitride semiconductor layers 24a, 24a' and 24a" and a second nitride semiconductor layer 24b whose compositions are different are formed repeatedly at least two times. The first nitride semiconductor layers 24a to 24a" are formed with energy band gaps which are larger than that of the quantum well layer 25a, and smaller than that of the quantum barrier layer 25b and smaller according as they approach the active layer 25, and the second nitride semiconductor layer 24b is formed with an energy band gap which is larger than the energy band gaps of at least the adjacent first nitride semiconductor layers 24a to 24a", and has a thickness enabling the tunneling of electrons. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
