| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid growth method and a liquid phase growth device by which oxidation concentration in a material solution can be reduced and a red light emitting diode be manufactured at high yield. <P>SOLUTION: A substrate holder 12 housing a GaAs substrate and a material solution holder 13 provided with two or more material solution sinks 15 in sliding direction are made to be opposite to each other, and they are made slidable relatively. The epitaxial growth device having such a structure is used to grow an epitaxial layer of a compound semiconductor containing Al. In this liquid phase growth method, Al is charged into another place other than the material solution sink 15, and Al is added to the material solution sink in the middle of temperature rising. The temperature for mixing the material solution sink with Al is preferably 550-650°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
