发明名称 |
A METHOD OF MANUFACTURING A WAFER |
摘要 |
The present invention relates to a method of manufacturing a semiconductor wafer that includes providing a substrate of a single crystalline first material that has an unfinished or rough surface, and epitaxially growing at least one layer of a second material directly on the unfinished or rough surface of the first material. The second material has a lattice that is different from that of the first material and the epitaxial growing of the second material is advantageously performed before a final surface finishing step on the unfinished or rough surface of the substrate to increase bonding between the materials. |
申请公布号 |
KR20060048325(A) |
申请公布日期 |
2006.05.18 |
申请号 |
KR20050049858 |
申请日期 |
2005.06.10 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
MALEVILLE CHRISTOPHE;ARENE EMMANUEL |
分类号 |
H01L21/20;C30B25/02;C30B25/18;H01L21/302;H01L39/24 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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