SCANNING ELECTRON MICROSCOPE SYSTEM FOR DIMENSION MEASUREMENT, AND EVALUATION SYSTEM OF CIRCUIT PATTERN FEATURE AND METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an SEM system for length measurement capable of high-accuracy and precise OPC (optical proximity correction) evaluation which is important from now on with advancement in a finer semiconductor design pattern, and to provide an evaluation system for a circuit pattern feature and a method therefor.

SOLUTION: In order to evaluate a difference between design data and a formed resist pattern in detail by using observation data of the resist pattern formed through a semiconductor lithography process, the design data and the observation data of the resist pattern are superposed to calculate a one-dimensional or two-dimensional geometric characteristic value expressing the difference between them. However, the design data and the resist pattern sometimes differ much in features due to an OPE (optical proximity effect). Therefore, in order to stably and highly accurately superpose the design data and the observation data of the resist pattern, a transfer pattern to be formed through the photomask data used for the exposure and the exposure conditions is calculated by using an exposure simulator, and the transfer pattern is superposed on the observation data of the actual resist pattern.

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